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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *High Voltage Capability *High Current Capability *Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such as: *Switching regulators *Inverters *Solenoid and relay drivers *Motor controls *Deflection circuits Absolute maximum ratings(Ta=25) SYMBOL VCEV VCEO VEBO IC ICM IB B BUS48AP PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range w ww scs .i VALUE 1000 450 7 V V V 15 30 5 20 150 175 -65~175 A A A A W UNIT .cn mi e IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE (sat)-2 VBE(sat) ICER ICEV IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 0.2A; IB= 0; L= 25mH IE= 50mA; IC= 0 IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100 B B BUS48AP MIN 450 7 MAX UNIT V V 1.5 2.0 5.0 1.6 1.6 0.5 3.0 0.2 2.0 0.1 8 350 V V V mA mA mA IC= 12A; IB= 2.4A IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100 B B VCE=rated VCER; RBE= 10 VCE=rated VCER; RBE= 10;TC=125 Output Capacitance Switching times Resistive Load td tr ts tf Delay Time Rise Time w w w. sem isc VEB= 5V; IC= 0 IC= 8A; VCE= 5V VCE=rated VCES; VBE(off)= 1.5V VCE=rated VCES; VBE(off)= 1.5V;TC=125 .cn i IE= 0; VCB= 10V, ftest= 1MHz pF 0.2 0.7 IC= 10A; IB1= 2A; VCC= 250V; VBE(off)= 5V, Duty Cycle2% 2.0 0.4 s s s s Storage Time Fall Time isc Websitewww.iscsemi.cn |
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